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  • FQU17P06TU

FQU17P06TU

FQU17P06TU datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FQU17P06TU
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: PDF
  • Stock: 622
  • Description: FQU17P06TU datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 7 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Weight 343.08mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2014
Series QFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 135MOhm
Subcategory Other Transistors
Voltage - Rated DC -60V
Technology MOSFET (Metal Oxide)
Current Rating -12A
Number of Elements 1
Power Dissipation-Max 2.5W Ta 44W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 13 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 135m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Rise Time 100ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 60 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) -12A
Threshold Voltage -4V
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage -60V
Pulsed Drain Current-Max (IDM) 48A
Height 7.57mm
Length 6.8mm
Width 2.5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet