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  • FQU5N60CTU

FQU5N60CTU

MOSFET N-CH 600V 2.8A IPAK


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FQU5N60CTU
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: PDF
  • Stock: 509
  • Description: MOSFET N-CH 600V 2.8A IPAK (Kg)

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Details

Tags

Parameters
Weight 343.08mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series QFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 2.5Ohm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Current Rating 5A
Number of Elements 1
Power Dissipation-Max 2.5W Ta 49W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.5 Ω @ 1.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 670pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.8A Tc
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Rise Time 42ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 46 ns
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) 2.8A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
See Relate Datesheet