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FQU5P20TU

MOSFET P-CH 200V 3.7A IPAK


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-FQU5P20TU
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: PDF
  • Stock: 682
  • Description: MOSFET P-CH 200V 3.7A IPAK (Kg)

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Details

Tags

Parameters
Height 7.57mm
Series QFET®
Length 6.8mm
Width 2.5mm
JESD-609 Code e3
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pbfree Code yes
Lead Free Lead Free
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 1.4Ohm
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -200V
Technology MOSFET (Metal Oxide)
Current Rating -3.7A
Number of Elements 1
Power Dissipation-Max 2.5W Ta 45W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 9 ns
FET Type P-Channel
Transistor Application SWITCHING
Factory Lead Time 4 Weeks
Rds On (Max) @ Id, Vgs 1.4 Ω @ 1.85A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 430pF @ 25V
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Current - Continuous Drain (Id) @ 25°C 3.7A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Mount Through Hole
Mounting Type Through Hole
Rise Time 70ns
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Drain to Source Voltage (Vdss) 200V
Number of Pins 3
Weight 343.08mg
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Transistor Element Material SILICON
Fall Time (Typ) 25 ns
Operating Temperature -55°C~150°C TJ
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 3.7A
Packaging Tube
Gate to Source Voltage (Vgs) 30V
Published 2013
Drain to Source Breakdown Voltage -200V
See Relate Datesheet