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HGT1S2N120CN

HGT1S2N120CN datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-HGT1S2N120CN
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Datasheet: PDF
  • Stock: 152
  • Description: HGT1S2N120CN datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC 1.2kV
Max Power Dissipation 104W
Current Rating 13A
Element Configuration Single
Power Dissipation 104W
Input Type Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 13A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.05V
Test Condition 960V, 2.6A, 51 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 2.6A
IGBT Type NPT
Gate Charge 30nC
Current - Collector Pulsed (Icm) 20A
Td (on/off) @ 25°C 25ns/205ns
Switching Energy 96μJ (on), 355μJ (off)
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet