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  • HGT1S3N60A4DS9A

HGT1S3N60A4DS9A

HGT1S3N60A4DS9A datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-HGT1S3N60A4DS9A
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 361
  • Description: HGT1S3N60A4DS9A datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package TO-263AB
Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 70W
Element Configuration Single
Power Dissipation 70W
Input Type Standard
Power - Max 70W
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 17A
Reverse Recovery Time 19 ns
Collector Emitter Breakdown Voltage 600V
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 17A
Collector Emitter Saturation Voltage 2V
Test Condition 390V, 3A, 50Ohm, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 3A
Gate Charge 21nC
Current - Collector Pulsed (Icm) 40A
Td (on/off) @ 25°C 6ns/73ns
Switching Energy 37μJ (on), 25μJ (off)
RoHS Status RoHS Compliant
See Relate Datesheet