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HGTG18N120BND

HGTG18N120BND datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-HGTG18N120BND
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 167
  • Description: HGTG18N120BND datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1.2kV
Max Power Dissipation 390W
Current Rating 54A
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 390W
Input Type Standard
Turn On Delay Time 23 μs
Transistor Application MOTOR CONTROL
Rise Time 22ns
Turn-Off Delay Time 170 μs
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 54A
Reverse Recovery Time 75 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.45V
Turn On Time 38 ns
Test Condition 960V, 18A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 18A
Turn Off Time-Nom (toff) 345 ns
IGBT Type NPT
Gate Charge 165nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 23ns/170ns
Switching Energy 1.9mJ (on), 1.8mJ (off)
Gate-Emitter Voltage-Max 20V
Fall Time-Max (tf) 200ns
Height 20.82mm
Length 15.87mm
Width 4.82mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Pbfree Code yes
See Relate Datesheet