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HGTG20N60B3

HGTG20N60B3 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-HGTG20N60B3
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 515
  • Description: HGTG20N60B3 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Turn On Time 45 ns
Test Condition 480V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 20A
Turn Off Time-Nom (toff) 360 ns
Gate Charge 80nC
Current - Collector Pulsed (Icm) 160A
Switching Energy 475μJ (on), 1.05mJ (off)
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 44 Weeks
Lifecycle Status ACTIVE, NOT REC (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Voltage - Rated DC 600V
Max Power Dissipation 165W
Current Rating 40A
Base Part Number HGTG20N60
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 165W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 25 ns
Transistor Application POWER CONTROL
Turn-Off Delay Time 220 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 40A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.8V
See Relate Datesheet