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HGTG30N60A4

HGTG30N60A4 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-HGTG30N60A4
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 185
  • Description: HGTG30N60A4 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 463W
Current Rating 75A
Base Part Number HGTG30N60
Number of Elements 1
Element Configuration Single
Power Dissipation 463W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 25 ns
Transistor Application POWER CONTROL
Rise Time 12ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 150 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 75A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.8V
Turn On Time 35 ns
Test Condition 390V, 30A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 30A
Continuous Collector Current 75A
Turn Off Time-Nom (toff) 238 ns
Gate Charge 225nC
Current - Collector Pulsed (Icm) 240A
Td (on/off) @ 25°C 25ns/150ns
Switching Energy 280μJ (on), 240μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7V
Fall Time-Max (tf) 70ns
Height 20.82mm
Length 15.87mm
Width 4.82mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet