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HGTG5N120BND

HGTG5N120BND datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-HGTG5N120BND
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 717
  • Description: HGTG5N120BND datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Lifecycle Status ACTIVE, NOT REC (Last Updated: 2 days ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Voltage - Rated DC 1.2kV
Max Power Dissipation 167W
Current Rating 21A
Number of Elements 1
Element Configuration Single
Power Dissipation 167W
Case Connection COLLECTOR
Input Type Standard
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 21A
Reverse Recovery Time 65 ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.45V
Max Breakdown Voltage 600V
Turn On Time 35 ns
Test Condition 960V, 5A, 25 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 5A
Continuous Collector Current 21A
Turn Off Time-Nom (toff) 357 ns
IGBT Type NPT
Gate Charge 53nC
Current - Collector Pulsed (Icm) 40A
Td (on/off) @ 25°C 22ns/160ns
Switching Energy 450μJ (on), 390μJ (off)
Height 20.82mm
Length 15.87mm
Width 4.82mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet