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HGTG7N60A4D

HGTG7N60A4D datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-HGTG7N60A4D
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 291
  • Description: HGTG7N60A4D datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Collector Emitter Saturation Voltage 1.9V
Turn On Time 17 ns
Test Condition 390V, 7A, 25 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 7A
Turn Off Time-Nom (toff) 205 ns
Gate Charge 37nC
Current - Collector Pulsed (Icm) 56A
Td (on/off) @ 25°C 11ns/100ns
Switching Energy 55μJ (on), 60μJ (off)
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 44 Weeks
Lifecycle Status ACTIVE, NOT REC (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS
HTS Code 8541.29.00.95
Voltage - Rated DC 600V
Max Power Dissipation 125W
Current Rating 34A
Number of Elements 1
Element Configuration Single
Power Dissipation 125W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Rise Time 11ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 34A
Reverse Recovery Time 22 ns
Collector Emitter Breakdown Voltage 600V
See Relate Datesheet