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HIP2101IBZ

Surface Mount Tube Active EAR99 Gate Drivers ICs Non-Inverting 2 114V V 8-SOIC (0.154, 3.90mm Width) HIP2101 Half-Bridge


  • Manufacturer: Renesas Electronics America Inc.
  • Origchip NO: 668-HIP2101IBZ
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: PDF
  • Stock: 321
  • Description: Surface Mount Tube Active EAR99 Gate Drivers ICs Non-Inverting 2 114V V 8-SOIC (0.154, 3.90mm Width) HIP2101 Half-Bridge (Kg)

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Details

Tags

Parameters
Factory Lead Time 11 Weeks
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2001
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Voltage - Supply 9V~14V
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1
Supply Voltage 12V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number HIP2101
Pin Count 8
JESD-30 Code R-PDSO-G8
Input Type Non-Inverting
Rise / Fall Time (Typ) 10ns 10ns
Channel Type Independent
Number of Drivers 2
Turn On Time 0.056 µs
Driven Configuration Half-Bridge
Gate Type N-Channel MOSFET
Current - Peak Output (Source, Sink) 2A 2A
High Side Driver YES
Logic Voltage - VIL, VIH 0.8V 2.2V
Turn Off Time 0.056 µs
High Side Voltage - Max (Bootstrap) 114V
Height Seated (Max) 1.75mm
Length 4.9mm
Width 3.9mm
RoHS Status ROHS3 Compliant

HIP2101IBZ Overview


A higher level of flexibility is provided by its 8-SOIC (0.154, 3.90mm Width) package.The packaging method is indicated by Tube.This device is equipped with 2 drivers for its configuration.In the direction of Surface Mount, gate drivers is mounted.When the supply voltage is 9V~14V it is able to demonstrate its superiority.This device is designed with a N-Channel MOSFET gate type.In this device, temperatures must not exceed -55°C~150°C TJ.Input type of Non-Inverting is used.It's configured with 8 terminations.Mosfet driver is possible to find various related parts under Mosfet drivers base part number HIP2101.The device is specifically designed to operate at 12V volts.The board contains 8 pins for component connections.Ideally, the high-side voltage should not exceed 114V.

HIP2101IBZ Features


Embedded in the Tube package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 114V

HIP2101IBZ Applications


There are a lot of Renesas Electronics America Inc. HIP2101IBZ gate drivers applications.

  • Pulse transformer drivers
  • Welding
  • High current laser/LED systems
  • White Goods - Air Conditioner, Washing Machine,
  • Refrigerator
  • Power factor correction (PFC) circuits
  • 48 V to 12 V PoL Converters, 48 V to Low Voltage Bus Converter,
  • Isolated Supplies for controller area network (CAN),
  • AC-DC Inverters
  • Driving GaN Power Transistors used in Full or Half?Bridge, LLC,