HIP6601BCBZ

HIP6601BCBZ Overview

In order to increase flexibility, the package 8-SOIC (0.154, 3.90mm Width) is used.A packaging method of Tube is used.Gate drivers incorporates wGate driversh 2 drivers for Gate driverss configuration.Surface Mount is the way in which it is mounted.In the absence of a 10.8V~13.2V supply voltage, its superiority can be demonstrated.The gate type on this device is N-Channel MOSFET.There is a temperature range for this device of 0°C~125°C TJ.Non-Inverting is the input type used in this program.As a result of its configuration, it contains a maximum of 8 terminations.There are numerous related parts listed under its base part number HIP6601B.In addition, it is specifically designed to operate with a supply voltage of 12V.8 pins are present on the component.Ideally, the high-side voltage should not exceed 15V.

HIP6601BCBZ Features

Embedded in the Tube package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 15V

HIP6601BCBZ Applications

There are a lot of Renesas Electronics America Inc. HIP6601BCBZ gate drivers applications.

• Active filtering
• Solar power supplies
• Digitally controlled power supplies
• Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
• LCD/LCoS/DLP portable and embedded pico projectors
• High current laser/LED systems
• UPS systems
• Industrial Modules
• Pulse transformer drivers
• Motor Control