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HIP6601BECB

Surface Mount Tube Obsolete EAR99 Gate Drivers ICs Non-Inverting 2 15V V 8-SOIC (0.154, 3.90mm Width) Exposed Pad HIP6601B Half-Bridge

Manufacturer: Renesas Electronics America Inc.
Origchip NO: 668-HIP6601BECB
Package: 8-SOIC (0.154, 3.90mm Width) Exposed Pad
Datasheet: PDF
Stock: 290
Description: Surface Mount Tube Obsolete EAR99 Gate Drivers ICs Non-Inverting 2 15V V 8-SOIC (0.154, 3.90mm Width) Exposed Pad HIP6601B Half-Bridge (Kg)

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Details

Tags

Parameters
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width) Exposed Pad
Surface Mount	YES
Operating Temperature	0°C~125°C TJ
Packaging	Tube
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	2 (1 Year)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Voltage - Supply	10.8V~13.2V
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Number of Functions	1
Supply Voltage	12V
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	HIP6601B
JESD-30 Code	R-PDSO-G8
Input Type	Non-Inverting
Rise / Fall Time (Typ)	20ns 20ns
Channel Type	Synchronous
Number of Drivers	2
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET
High Side Driver	YES
High Side Voltage - Max (Bootstrap)	15V
Height Seated (Max)	1.68mm
Length	4.89mm
Width	3.9mm
RoHS Status	Non-RoHS Compliant

HIP6601BECB Overview

In order to increase flexibility, the package 8-SOIC (0.154, 3.90mm Width) Exposed Pad is used.Gate drivers is packaged in the way of Tube.Gate drivers incorporates wGate driversh 2 drivers for Gate driverss configuration.There is a mounting bracket in the way of Surface Mount.Using a 10.8V~13.2V supply voltage, gate drivers is capable of demonstrating Gate driverss superiorGate driversy.This gate type has a N-Channel MOSFET design.There is a temperature range for this device of 0°C~125°C TJ.Mosfet driver uses Non-Inverting as Mosfet drivers input type.Its configuration starts with 8 terminations.Mosfet driver is possible to find various related parts under Mosfet drivers base part number HIP6601B.The device is specifically designed to operate at 12V volts.Ideally, the high-side voltage should not exceed 15V.

HIP6601BECB Features

Embedded in the Tube package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 15V

HIP6601BECB Applications

There are a lot of Renesas Electronics America Inc. HIP6601BECB gate drivers applications.

Portable Media Players
Portable Navigation Devices
Active filtering
Industrial Modules
Automotive Applications
Welding
Pulse transformer drivers
Portable computers
Isolated switch mode power supplies (SMPS)
Refrigerator