HIP6601BECBZ

HIP6601BECBZ Overview

A higher degree of flexibility is achieved by adopting its 8-SOIC (0.154, 3.90mm Width) Exposed Pad package.Tube is the form of the package.This device is equipped with 2 drivers for its configuration.In this case, gate drivers is mounted along the way of Surface Mount.In the absence of a power supply voltage of 10.8V~13.2V V, it is able to demonstrate its superiority.A gate type of N-Channel MOSFET is used in its design.This device is allowed to operate in a temperature range of 0°C~125°C TJ.Non-Inverting is the input type used in this program.As a result of its configuration, it contains a maximum of 8 terminations.There are various parts that can be found under its base part number HIP6601B.The device is specifically designed to operate at 12V volts.There can be a voltage up to 15V on the high-side (Bootstrap).

HIP6601BECBZ Features

Embedded in the Tube package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 15V

HIP6601BECBZ Applications

There are a lot of Renesas Electronics America Inc. HIP6601BECBZ gate drivers applications.

• Solar power supplies
• Portable computers
• Active Clamp Flyback or Forward and Synchronous Rectifier
• Topologies
• Smart Phones
• Isolated Supplies for controller area network (CAN),
• Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
• Industrial Motor Inverter - Power Tools, Robotics
• Line drivers
• Multicolor LED/laser displays