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HIP6603BECB

Surface Mount Tube Obsolete EAR99 Gate Drivers ICs Non-Inverting 2 15V V 8-SOIC (0.154, 3.90mm Width) Exposed Pad HIP6603B Half-Bridge


  • Manufacturer: Renesas Electronics America Inc.
  • Origchip NO: 668-HIP6603BECB
  • Package: 8-SOIC (0.154, 3.90mm Width) Exposed Pad
  • Datasheet: PDF
  • Stock: 129
  • Description: Surface Mount Tube Obsolete EAR99 Gate Drivers ICs Non-Inverting 2 15V V 8-SOIC (0.154, 3.90mm Width) Exposed Pad HIP6603B Half-Bridge (Kg)

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Details

Tags

Parameters
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width) Exposed Pad
Surface Mount YES
Operating Temperature 0°C~125°C TJ
Packaging Tube
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 2 (1 Year)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Supply 10.8V~13.2V
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1
Supply Voltage 12V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number HIP6603B
JESD-30 Code R-PDSO-G8
Input Type Non-Inverting
Rise / Fall Time (Typ) 20ns 20ns
Channel Type Synchronous
Number of Drivers 2
Driven Configuration Half-Bridge
Gate Type N-Channel MOSFET
High Side Driver YES
High Side Voltage - Max (Bootstrap) 15V
Height Seated (Max) 1.68mm
Length 4.89mm
Width 3.9mm
RoHS Status Non-RoHS Compliant

HIP6603BECB Overview


In order to increase flexibility, the package 8-SOIC (0.154, 3.90mm Width) Exposed Pad is used.A packaging method of Tube is used.A total of 2 drivers are integrated into its configuration.Surface Mount is the way in which it is mounted.WGate driversh a 10.8V~13.2V supply voltage, gate drivers is able to demonstrate Gate driverss superiorGate driversy.This device is designed with a N-Channel MOSFET gate type.This device is allowed to operate in a temperature range of 0°C~125°C TJ.Mosfet driver uses Non-Inverting as Mosfet drivers input type.The configuration is based on 8 terminations.Numerous related parts can be found under its base part number HIP6603B.A voltage of 12V is required for its operation.Mosfet driver is possible for the high-side voltage - Max (Bootstrap) to be as low as 15V.

HIP6603BECB Features


Embedded in the Tube package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 15V

HIP6603BECB Applications


There are a lot of Renesas Electronics America Inc. HIP6603BECB gate drivers applications.

  • Power factor correction (PFC) circuits
  • High frequency line drivers
  • Head-up and Head mounted displays
  • Active Clamp Flyback or Forward and Synchronous Rectifier
  • Portable computers
  • Multicolor LED/laser displays
  • High-voltage isolated DC-DC converters
  • Commercial and agricultural vehicles (CAV)
  • Dual-Battery Systems
  • Industrial motor drives - compact, standard, premium, servo drives