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HUF76407D3ST

MOSFET 11a 60V 0.107 Ohm Logic Level N-Ch


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-HUF76407D3ST
  • Package: TO-252-3
  • Datasheet: PDF
  • Stock: 981
  • Description: MOSFET 11a 60V 0.107 Ohm Logic Level N-Ch (Kg)

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Details

Tags

Parameters
Rds On Max 92 mΩ
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Surface Mount
Package / Case TO-252-3
Number of Pins 3
Weight 260.37mg
Packaging Tape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 92mOhm
Terminal Finish Tin (Sn)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Max Power Dissipation 38W
Terminal Form GULL WING
Current Rating 11A
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 38W
Case Connection DRAIN
Turn On Delay Time 5 ns
Transistor Application SWITCHING
Rise Time 32ns
Drain to Source Voltage (Vdss) 60V
Polarity/Channel Type N-CHANNEL
Fall Time (Typ) 45 ns
Turn-Off Delay Time 43 ns
Continuous Drain Current (ID) 12A
Threshold Voltage 1V
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 60V
Input Capacitance 350pF
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Resistance 77mOhm
See Relate Datesheet