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HUFA75309T3ST

N-CHANNEL POWER MOSFET


  • Manufacturer: Rochester Electronics, LLC
  • Origchip NO: 699-HUFA75309T3ST
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 117
  • Description: N-CHANNEL POWER MOSFET (Kg)

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Shipping Cost

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series UltraFET™
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G4
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.1W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 70m Ω @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 352pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3A Ta
Gate Charge (Qg) (Max) @ Vgs 23nC @ 20V
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 3A
Drain-source On Resistance-Max 0.07Ohm
DS Breakdown Voltage-Min 55V
RoHS Status ROHS3 Compliant
See Relate Datesheet