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  • HUFA76419D3ST

HUFA76419D3ST

Transistor, Mosfet, N-Channel, 60V V(Br)Dss, 20A I(D), To-252Aa Rohs Compliant: Yes


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-HUFA76419D3ST
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 649
  • Description: Transistor, Mosfet, N-Channel, 60V V(Br)Dss, 20A I(D), To-252Aa Rohs Compliant: Yes (Kg)

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Details

Tags

Parameters
Rise Time 35ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 50 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 20A
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 60V
Height 2.39mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 260.37mg
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2002
Series UltraFET™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating 20A
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 75W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 75W
Case Connection DRAIN
Turn On Delay Time 6.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 37m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 27.5nC @ 10V
See Relate Datesheet