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  • IAUT260N10S5N019ATMA1

IAUT260N10S5N019ATMA1

IAUT260N10S5N019ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IAUT260N10S5N019ATMA1
  • Package: 8-PowerSFN
  • Datasheet: PDF
  • Stock: 465
  • Description: IAUT260N10S5N019ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1
Power Dissipation-Max 300W Tc
Power Dissipation 300W
Turn On Delay Time 21 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.9m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 210μA
Input Capacitance (Ciss) (Max) @ Vds 11830pF @ 50V
Current - Continuous Drain (Id) @ 25°C 260A Tc
Gate Charge (Qg) (Max) @ Vgs 166nC @ 10V
Factory Lead Time 20 Weeks
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 49 ns
Mounting Type Surface Mount
Continuous Drain Current (ID) 260A
Package / Case 8-PowerSFN
Gate to Source Voltage (Vgs) 20V
Manufacturer Package Identifier PG-HSOF-8
Drain to Source Breakdown Voltage 100V
Operating Temperature -55°C~175°C TJ
Max Junction Temperature (Tj) 175°C
Packaging Tape & Reel (TR)
Height 2.4mm
RoHS Status ROHS3 Compliant
Published 2017
Series OptiMOS™-5
Part Status Active
See Relate Datesheet