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  • IDB30E120ATMA1

IDB30E120ATMA1

IDB30E120ATMA1 datasheet pdf and Diodes - Rectifiers - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IDB30E120ATMA1
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 970
  • Description: IDB30E120ATMA1 datasheet pdf and Diodes - Rectifiers - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Operating Temperature - Junction -55°C~150°C
Halogen Free Halogen Free
Voltage - DC Reverse (Vr) (Max) 1200V
Current - Average Rectified (Io) 50A DC
Forward Voltage 2.15V
Max Reverse Voltage (DC) 1.2kV
Average Rectified Current 50A
Number of Phases 1
Reverse Recovery Time 243 ns
Peak Reverse Current 100μA
Max Repetitive Reverse Voltage (Vrrm) 1.2kV
Peak Non-Repetitive Surge Current 102A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Diode Element Material SILICON
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
HTS Code 8541.10.00.80
Terminal Form GULL WING
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 100μA @ 1200V
Voltage - Forward (Vf) (Max) @ If 2.15V @ 30A
Forward Current 50A
See Relate Datesheet