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IGP30N65H5XKSA1

IGP30N65H5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IGP30N65H5XKSA1
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 340
  • Description: IGP30N65H5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2013
Series TrenchStop™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Max Power Dissipation 188W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Input Type Standard
Power - Max 188W
Transistor Application POWER CONTROL
Halogen Free Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 55A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 650V
Turn On Time 28 ns
Test Condition 400V, 15A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 30A
Turn Off Time-Nom (toff) 224 ns
IGBT Type Trench
Gate Charge 70nC
Current - Collector Pulsed (Icm) 90A
Td (on/off) @ 25°C 19ns/177ns
Switching Energy 280μJ (on), 100μJ (off)
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet