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IGW100N60H3FKSA1

IGW100N60H3FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IGW100N60H3FKSA1
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 150
  • Description: IGW100N60H3FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2008
Series TrenchStop™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 714W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Input Type Standard
Power - Max 714W
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 140A
Collector Emitter Breakdown Voltage 600V
Test Condition 400V, 100A, 3.5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 100A
IGBT Type Trench Field Stop
Gate Charge 625nC
Current - Collector Pulsed (Icm) 300A
Td (on/off) @ 25°C 30ns/265ns
Switching Energy 3.7mJ (on), 1.9mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.7V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet