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IHW20N135R3FKSA1

IHW20N135R3FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IHW20N135R3FKSA1
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 700
  • Description: IHW20N135R3FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Switching Energy 1.3mJ (off)
Gate-Emitter Voltage-Max 25V
Gate-Emitter Thr Voltage-Max 6.4V
RoHS Status RoHS Compliant
Factory Lead Time 14 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2008
Series TrenchStop®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Input Type Standard
Power - Max 310W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Voltage - Collector Emitter Breakdown (Max) 1350V
Current - Collector (Ic) (Max) 40A
Power Dissipation-Max (Abs) 310W
Turn On Time 505 ns
Test Condition 600V, 20A, 15 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 20A
Turn Off Time-Nom (toff) 385 ns
IGBT Type Trench
Gate Charge 195nC
Current - Collector Pulsed (Icm) 60A
Td (on/off) @ 25°C -/335ns
See Relate Datesheet