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IKD04N60R

IKD04N60R datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IKD04N60R
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 690
  • Description: IKD04N60R datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Cut Tape (CT)
Published 2003
Series TrenchStop®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number *KD04N60
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 75W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 43ns
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 8A
Power Dissipation-Max (Abs) 75W
Turn On Time 20 ns
Test Condition 400V, 4A, 43 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 4A
Turn Off Time-Nom (toff) 342 ns
IGBT Type Trench
Gate Charge 27nC
Current - Collector Pulsed (Icm) 12A
Td (on/off) @ 25°C 14ns/146ns
Switching Energy 240μJ
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.7V
RoHS Status RoHS Compliant
See Relate Datesheet