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IMT4-7-F

Bipolar Transistors - BJT PNP BIPOLAR


  • Manufacturer: Diodes Incorporated
  • Origchip NO: 233-IMT4-7-F
  • Package: SOT-23-6
  • Datasheet: PDF
  • Stock: 185
  • Description: Bipolar Transistors - BJT PNP BIPOLAR (Kg)

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Details

Tags

Parameters
hFE Min 180
Height 1.1mm
Length 3mm
Width 1.6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Number of Pins 6
Weight 29.993795mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 225mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 140MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MT4
Pin Count 6
Number of Elements 2
Polarity PNP
Element Configuration Dual
Power Dissipation 225mW
Gain Bandwidth Product 140MHz
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 120V
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 2mA 6V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 120V
Transition Frequency 140MHz
Collector Base Voltage (VCBO) 120V
Emitter Base Voltage (VEBO) 5V
See Relate Datesheet