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IPA105N15N3GXKSA1

Trans MOSFET N-CH 150V 37A 3-Pin(3+Tab) TO-220 Full-Pak


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPA105N15N3GXKSA1
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 950
  • Description: Trans MOSFET N-CH 150V 37A 3-Pin(3+Tab) TO-220 Full-Pak (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Drive Voltage (Max Rds On,Min Rds On) 8V 10V
Vgs (Max) ±20V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 37A
Factory Lead Time 13 Weeks
JEDEC-95 Code TO-220AB
Mount Through Hole
Mounting Type Through Hole
Gate to Source Voltage (Vgs) 20V
Package / Case TO-220-3 Full Pack
Max Dual Supply Voltage 150V
Number of Pins 3
Avalanche Energy Rating (Eas) 740 mJ
RoHS Status ROHS3 Compliant
Transistor Element Material SILICON
Lead Free Lead Free
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2008
Series OptiMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 40.5W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 40.5W
Case Connection ISOLATED
Turn On Delay Time 17 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 10.5m Ω @ 37A, 10V
Vgs(th) (Max) @ Id 4V @ 160μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 4300pF @ 75V
Current - Continuous Drain (Id) @ 25°C 37A Tc
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Rise Time 20ns
See Relate Datesheet