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  • IPA50R199CPXKSA1

IPA50R199CPXKSA1

MOSFET N-CH 500V 17A TO220-3


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPA50R199CPXKSA1
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 739
  • Description: MOSFET N-CH 500V 17A TO220-3 (Kg)

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Details

Tags

Parameters
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
Terminal Finish Tin (Sn)
HTS Code 8541.29.00.95
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 139W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 139W
Case Connection ISOLATED
Turn On Delay Time 35 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 199m Ω @ 9.9A, 10V
Vgs(th) (Max) @ Id 3.5V @ 660μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 100V
Current - Continuous Drain (Id) @ 25°C 17A Tc
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Rise Time 14ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) 17A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.199Ohm
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 40A
Dual Supply Voltage 550V
Nominal Vgs 3 V
Height 16.15mm
Length 10.65mm
Width 4.85mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
See Relate Datesheet