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IPA60R120P7XKSA1

MOSFET N-CHANNEL 600V 26A TO220


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPA60R120P7XKSA1
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 682
  • Description: MOSFET N-CHANNEL 600V 26A TO220 (Kg)

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Shipping Cost

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 18 Weeks
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2014
Series CoolMOS™ P7
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 28W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 120m Ω @ 8.2A, 10V
Vgs(th) (Max) @ Id 4V @ 410μA
Input Capacitance (Ciss) (Max) @ Vds 1544pF @ 400V
Current - Continuous Drain (Id) @ 25°C 26A Tc
Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.12Ohm
Pulsed Drain Current-Max (IDM) 78A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 82 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet