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IPA60R160C6XKSA1

N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-220FP Infineon IPA60R160C6XKSA1


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPA60R160C6XKSA1
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 626
  • Description: N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-220FP Infineon IPA60R160C6XKSA1 (Kg)

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Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 34W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 34W
Case Connection ISOLATED
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 160m Ω @ 11.3A, 10V
Vgs(th) (Max) @ Id 3.5V @ 750μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1660pF @ 100V
Current - Continuous Drain (Id) @ 25°C 23.8A Tc
Gate Charge (Qg) (Max) @ Vgs 75nC @ 10V
Rise Time 13ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 96 ns
Continuous Drain Current (ID) 23.8A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Pulsed Drain Current-Max (IDM) 70A
Avalanche Energy Rating (Eas) 497 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet