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  • IPA60R190C6XKSA1

IPA60R190C6XKSA1

MOSFET N-CH 600V 20.2A TO220-FP


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPA60R190C6XKSA1
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 614
  • Description: MOSFET N-CH 600V 20.2A TO220-FP (Kg)

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Details

Tags

Parameters
Vgs(th) (Max) @ Id 3.5V @ 630μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 100V
Current - Continuous Drain (Id) @ 25°C 20.2A Tc
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Rise Time 11ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) 20.2A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.19Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 59A
Avalanche Energy Rating (Eas) 418 mJ
Nominal Vgs 3 V
Height 9.45mm
Length 10.36mm
Width 4.57mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 40 Weeks
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 34W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 34W
Case Connection ISOLATED
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 190m Ω @ 9.5A, 10V
See Relate Datesheet