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IPA60R520E6XKSA1

Trans MOSFET N-CH 600V 8.1A 3-Pin(3+Tab) TO-220 Full-Pack


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPA60R520E6XKSA1
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 788
  • Description: Trans MOSFET N-CH 600V 8.1A 3-Pin(3+Tab) TO-220 Full-Pack (Kg)

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Details

Tags

Parameters
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 29W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 520m Ω @ 2.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 230μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 512pF @ 100V
Current - Continuous Drain (Id) @ 25°C 8.1A Tc
Gate Charge (Qg) (Max) @ Vgs 23.4nC @ 10V
Rise Time 10ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 8.1A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Drain-source On Resistance-Max 0.52Ohm
Pulsed Drain Current-Max (IDM) 22A
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet