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  • IPA60R600P7XKSA1

IPA60R600P7XKSA1

Single N-Channel 600V 600 mOhm 9 nC CoolMOS? Power Mosfet - TO-220-3FP


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPA60R600P7XKSA1
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 224
  • Description: Single N-Channel 600V 600 mOhm 9 nC CoolMOS? Power Mosfet - TO-220-3FP (Kg)

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Details

Tags

Parameters
Max Junction Temperature (Tj) 150°C
Height 20.7mm
RoHS Status ROHS3 Compliant
Factory Lead Time 18 Weeks
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2014
Series CoolMOS™ P7
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 21W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 21W
Case Connection ISOLATED
Turn On Delay Time 7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 600m Ω @ 1.7A, 10V
Vgs(th) (Max) @ Id 4V @ 80μA
Input Capacitance (Ciss) (Max) @ Vds 363pF @ 400V
Current - Continuous Drain (Id) @ 25°C 6A Tc
Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 37 ns
Continuous Drain Current (ID) 6A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.6Ohm
Drain to Source Breakdown Voltage 600V
See Relate Datesheet