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IPA60R750E6XKSA1
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The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Rds On (Max) @ Id, Vgs | 750m Ω @ 2A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 170μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 373pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 5.7A Tc |
| Factory Lead Time | 12 Weeks |
| Gate Charge (Qg) (Max) @ Vgs | 17.2nC @ 10V |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Rise Time | 7ns |
| Package / Case | TO-220-3 Full Pack |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Vgs (Max) | ±20V |
| Published | 2008 |
| Series | CoolMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Fall Time (Typ) | 12 ns |
| Turn-Off Delay Time | 50 ns |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Continuous Drain Current (ID) | 5.7A |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| JEDEC-95 Code | TO-220AB |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Gate to Source Voltage (Vgs) | 20V |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Max Dual Supply Voltage | 600V |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Drain-source On Resistance-Max | 0.75Ohm |
| Power Dissipation-Max | 27W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Avalanche Energy Rating (Eas) | 72 mJ |
| Power Dissipation | 27W |
| RoHS Status | ROHS3 Compliant |
| Case Connection | ISOLATED |
| Turn On Delay Time | 9 ns |
| FET Type | N-Channel |
| Lead Free | Lead Free |
| Transistor Application | SWITCHING |
See Relate Datesheet