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IPA60R800CEXKSA1

MOSFET N-Ch 600V 5.6A TO220FP-3


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPA60R800CEXKSA1
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 530
  • Description: MOSFET N-Ch 600V 5.6A TO220FP-3 (Kg)

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Details

Tags

Parameters
Factory Lead Time 6 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.299997g
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS™ CE
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 27W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 800m Ω @ 2A, 10V
Vgs(th) (Max) @ Id 3.5V @ 170μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 373pF @ 100V
Current - Continuous Drain (Id) @ 25°C 5.6A Tc
Gate Charge (Qg) (Max) @ Vgs 17.2nC @ 10V
Rise Time 7ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 5.6A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 600V
Drain-source On Resistance-Max 0.8Ohm
Drain to Source Breakdown Voltage 600V
Avalanche Energy Rating (Eas) 72 mJ
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet