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IPA65R110CFDXKSA1

Trans MOSFET N-CH 700V 31.2A Automotive 3-Pin(3+Tab) TO-220FP Tube


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPA65R110CFDXKSA1
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 248
  • Description: Trans MOSFET N-CH 700V 31.2A Automotive 3-Pin(3+Tab) TO-220FP Tube (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 18 Weeks
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface Mount NO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 34.7W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 110m Ω @ 12.7A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.3mA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 3240pF @ 100V
Current - Continuous Drain (Id) @ 25°C 31.2A Tc
Gate Charge (Qg) (Max) @ Vgs 118nC @ 10V
Rise Time 11ns
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 68 ns
Continuous Drain Current (ID) 31.2A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.11Ohm
Drain to Source Breakdown Voltage 700V
Pulsed Drain Current-Max (IDM) 99.6A
Avalanche Energy Rating (Eas) 845 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet