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IPA65R190C7XKSA1

MOSFET N-CH 650V 8A TO220


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPA65R190C7XKSA1
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 775
  • Description: MOSFET N-CH 650V 8A TO220 (Kg)

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Shipping Cost

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Shipping Method

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Delivery Time

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 18 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS™ C7
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 30W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 190m Ω @ 5.7A, 10V
Vgs(th) (Max) @ Id 4V @ 290μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1150pF @ 400V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 54 ns
Continuous Drain Current (ID) 8A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 650V
Drain Current-Max (Abs) (ID) 8A
Drain-source On Resistance-Max 0.19Ohm
Pulsed Drain Current-Max (IDM) 49A
Avalanche Energy Rating (Eas) 57 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet