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  • IPA65R280C6XKSA1

IPA65R280C6XKSA1

MOSFET N-CH 650V 13.8A TO220


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPA65R280C6XKSA1
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 714
  • Description: MOSFET N-CH 650V 13.8A TO220 (Kg)

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Shipping Method

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Supplier Device Package TO-220 Full Pack
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series CoolMOS™
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 32W Tc
Element Configuration Single
Power Dissipation 32W
Turn On Delay Time 13 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 280mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 440μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 100V
Current - Continuous Drain (Id) @ 25°C 13.8A Tc
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Rise Time 11ns
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 105 ns
Continuous Drain Current (ID) 13.8A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 700V
Input Capacitance 950pF
Drain to Source Resistance 280mOhm
Rds On Max 280 mΩ
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet