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IPAW60R280CEXKSA1

MOSFET N-CH 600V TO220-3


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPAW60R280CEXKSA1
  • Package: TO-220-3 Full Pack, Variant
  • Datasheet: PDF
  • Stock: 384
  • Description: MOSFET N-CH 600V TO220-3 (Kg)

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Delivery Time

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Mount Through Hole
Drain to Source Voltage (Vdss) 600V
Mounting Type Through Hole
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Package / Case TO-220-3 Full Pack, Variant
Number of Pins 3
Transistor Element Material SILICON
Continuous Drain Current (ID) 19.3A
Operating Temperature -40°C~150°C TJ
Threshold Voltage 3V
Packaging Tube
JEDEC-95 Code TO-220AB
Published 2013
Drain-source On Resistance-Max 0.28Ohm
Series CoolMOS™
Pbfree Code yes
Part Status Active
Pulsed Drain Current-Max (IDM) 40A
Moisture Sensitivity Level (MSL) 1 (Unlimited)
DS Breakdown Voltage-Min 600V
Number of Terminations 3
Avalanche Energy Rating (Eas) 284 mJ
ECCN Code EAR99
FET Feature Super Junction
Technology MOSFET (Metal Oxide)
REACH SVHC No SVHC
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
RoHS Status ROHS3 Compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 32W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 280m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 430μA
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 100V
Current - Continuous Drain (Id) @ 25°C 19.3A Tc
Factory Lead Time 18 Weeks
See Relate Datesheet