All Products

IPAW60R360P7SXKSA1

MOSFET N-CHANNEL 650V 9A TO220


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPAW60R360P7SXKSA1
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 581
  • Description: MOSFET N-CHANNEL 650V 9A TO220 (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to Utmel.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Factory Lead Time 18 Weeks
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tube
Published 2014
Series CoolMOS™ P7
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 22W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 22W
Case Connection ISOLATED
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 360m Ω @ 2.7A, 10V
Vgs(th) (Max) @ Id 4V @ 140μA
Input Capacitance (Ciss) (Max) @ Vds 555pF @ 400V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Turn-Off Delay Time 42 ns
Continuous Drain Current (ID) 9A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.36Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 26A
Avalanche Energy Rating (Eas) 27 mJ
Max Junction Temperature (Tj) 150°C
Height 18.57mm
RoHS Status ROHS3 Compliant
See Relate Datesheet