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  • IPB017N10N5LFATMA1

IPB017N10N5LFATMA1

IPB017N10N5LFATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPB017N10N5LFATMA1
  • Package: TO-263-7, D2Pak (6 Leads + Tab)
  • Datasheet: PDF
  • Stock: 677
  • Description: IPB017N10N5LFATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 313W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 313W
Case Connection DRAIN
Turn On Delay Time 7 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.7m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 4.1V @ 270μA
Input Capacitance (Ciss) (Max) @ Vds 840pF @ 50V
Current - Continuous Drain (Id) @ 25°C 180A Tc
Gate Charge (Qg) (Max) @ Vgs 195nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 128 ns
Continuous Drain Current (ID) 31A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 720A
Avalanche Energy Rating (Eas) 979 mJ
Max Junction Temperature (Tj) 150°C
Height 4.5mm
RoHS Status ROHS3 Compliant
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab)
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series OptiMOS™-5
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G6
See Relate Datesheet