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  • IPB020N04NGATMA1

IPB020N04NGATMA1

Trans MOSFET N-CH 40V 140A 7-Pin(6+Tab) TO-263


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPB020N04NGATMA1
  • Package: TO-263-7, D2Pak (6 Leads + Tab)
  • Datasheet: PDF
  • Stock: 180
  • Description: Trans MOSFET N-CH 40V 140A 7-Pin(6+Tab) TO-263 (Kg)

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Details

Tags

Parameters
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab)
Number of Pins 7
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature ULTRA-LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G6
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 167W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 167W
Case Connection DRAIN
Turn On Delay Time 27 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 95μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 9700pF @ 20V
Current - Continuous Drain (Id) @ 25°C 140A Tc
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Rise Time 6.4ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 7.8 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 140A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 40V
Drain-source On Resistance-Max 0.002Ohm
Pulsed Drain Current-Max (IDM) 980A
Avalanche Energy Rating (Eas) 140 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet