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  • IPB020N10N5LFATMA1

IPB020N10N5LFATMA1

IPB020N10N5LFATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPB020N10N5LFATMA1
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 204
  • Description: IPB020N10N5LFATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package PG-TO263-3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series OptiMOS™-5
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 313W Tc
Power Dissipation 313W
Turn On Delay Time 7 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4.1V @ 270μA
Input Capacitance (Ciss) (Max) @ Vds 840pF @ 50V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 195nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 128 ns
Continuous Drain Current (ID) 29A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Max Junction Temperature (Tj) 150°C
Drain to Source Resistance 1.8mOhm
Height 4.7mm
RoHS Status ROHS3 Compliant
See Relate Datesheet