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  • IPB025N08N3GATMA1

IPB025N08N3GATMA1

Trans MOSFET N-CH 80V 120A 3-Pin(2+Tab) TO-263


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPB025N08N3GATMA1
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 562
  • Description: Trans MOSFET N-CH 80V 120A 3-Pin(2+Tab) TO-263 (Kg)

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Details

Tags

Parameters
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
Turn On Delay Time 28 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.5m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 3.5V @ 270μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 14200pF @ 40V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 206nC @ 10V
Rise Time 73ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 33 ns
Turn-Off Delay Time 86 ns
Continuous Drain Current (ID) 120A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 80V
Drain-source On Resistance-Max 0.0025Ohm
Pulsed Drain Current-Max (IDM) 480A
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet