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  • IPB031NE7N3GATMA1

IPB031NE7N3GATMA1

Trans MOSFET N-CH 75V 100A 3-Pin(2+Tab) TO-263


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPB031NE7N3GATMA1
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 659
  • Description: Trans MOSFET N-CH 75V 100A 3-Pin(2+Tab) TO-263 (Kg)

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Details

Tags

Parameters
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 214W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 214W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.1m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 155μA
Input Capacitance (Ciss) (Max) @ Vds 8130pF @ 37.5V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 117nC @ 10V
Rise Time 85ns
Drain to Source Voltage (Vdss) 75V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 400A
DS Breakdown Voltage-Min 75V
Avalanche Energy Rating (Eas) 640 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet