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  • IPB033N10N5LFATMA1

IPB033N10N5LFATMA1

IPB033N10N5LFATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPB033N10N5LFATMA1
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 433
  • Description: IPB033N10N5LFATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series OptiMOS™-5
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 179W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 179W
Case Connection DRAIN
Turn On Delay Time 8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.3m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 4.1V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 460pF @ 50V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 102nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 64 ns
Continuous Drain Current (ID) 120A
Threshold Voltage 3.3V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 23A
Drain-source On Resistance-Max 0.0033Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 480A
Avalanche Energy Rating (Eas) 273 mJ
Height 4.5mm
RoHS Status ROHS3 Compliant
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
See Relate Datesheet