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  • IPB044N15N5ATMA1

IPB044N15N5ATMA1

IPB044N15N5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPB044N15N5ATMA1
  • Package: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
  • Datasheet: PDF
  • Stock: 856
  • Description: IPB044N15N5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Package / Case TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series OptiMOS™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G6
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
Turn On Delay Time 19 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.4m Ω @ 87A, 10V
Vgs(th) (Max) @ Id 4.6V @ 264μA
Input Capacitance (Ciss) (Max) @ Vds 8000pF @ 75V
Current - Continuous Drain (Id) @ 25°C 174A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 8V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 174A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0044Ohm
Drain to Source Breakdown Voltage 150V
Pulsed Drain Current-Max (IDM) 696A
Avalanche Energy Rating (Eas) 470 mJ
Max Junction Temperature (Tj) 175°C
Height 4.5mm
RoHS Status ROHS3 Compliant
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
See Relate Datesheet