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  • IPB055N03LGATMA1

IPB055N03LGATMA1

Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-263


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPB055N03LGATMA1
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 393
  • Description: Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-263 (Kg)

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Details

Tags

Parameters
Technology MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Terminal Position SINGLE
Rise Time 5.2ns
Drain to Source Voltage (Vdss) 30V
Terminal Form GULL WING
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Peak Reflow Temperature (Cel) NOT SPECIFIED
Vgs (Max) ±20V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Fall Time (Typ) 4 ns
Pin Count 4
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 50A
JESD-30 Code R-PSSO-G2
Gate to Source Voltage (Vgs) 20V
Qualification Status Not Qualified
Drain-source On Resistance-Max 0.0078Ohm
Avalanche Energy Rating (Eas) 60 mJ
Factory Lead Time 12 Weeks
Number of Elements 1
REACH SVHC No SVHC
Mount Surface Mount
Configuration SINGLE WITH BUILT-IN DIODE
RoHS Status ROHS3 Compliant
Mounting Type Surface Mount
Power Dissipation-Max 68W Tc
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Operating Mode ENHANCEMENT MODE
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Power Dissipation 68W
Packaging Tape & Reel (TR)
Case Connection DRAIN
Published 2008
Turn On Delay Time 6.7 ns
Series OptiMOS™
JESD-609 Code e3
FET Type N-Channel
Pbfree Code no
Part Status Obsolete
Transistor Application SWITCHING
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Rds On (Max) @ Id, Vgs 5.5m Ω @ 30A, 10V
Number of Terminations 2
ECCN Code EAR99
Vgs(th) (Max) @ Id 2.2V @ 250μA
Terminal Finish Tin (Sn)
Input Capacitance (Ciss) (Max) @ Vds 3200pF @ 15V
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Current - Continuous Drain (Id) @ 25°C 50A Tc
See Relate Datesheet