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IPB065N10N3GATMA1

Trans MOSFET N-CH 100V 80A 3-Pin TO-263 T/R


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPB065N10N3GATMA1
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 882
  • Description: Trans MOSFET N-CH 100V 80A 3-Pin TO-263 T/R (Kg)

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Details

Tags

Parameters
Input Capacitance (Ciss) (Max) @ Vds 4910pF @ 50V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 37 ns
Continuous Drain Current (ID) 80A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Drain-source On Resistance-Max 0.0065Ohm
Avalanche Energy Rating (Eas) 160 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series OptiMOS™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 150W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 19 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.5m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 3.5V @ 90μA
Halogen Free Halogen Free
See Relate Datesheet