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  • IPB100N08S2L07ATMA1

IPB100N08S2L07ATMA1

Trans MOSFET N-CH 75V 100A 3-Pin(2+Tab) TO-263


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPB100N08S2L07ATMA1
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 953
  • Description: Trans MOSFET N-CH 75V 100A 3-Pin(2+Tab) TO-263 (Kg)

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Details

Tags

Parameters
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 300W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 19 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.5m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 5400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 246nC @ 10V
Rise Time 56ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 85 ns
Factory Lead Time 10 Weeks
Continuous Drain Current (ID) 100A
Mount Surface Mount
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 75V
Mounting Type Surface Mount
Drain-source On Resistance-Max 0.0087Ohm
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 810 mJ
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
RoHS Status ROHS3 Compliant
Number of Pins 3
Lead Free Contains Lead
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series OptiMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
See Relate Datesheet