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  • IPB120N04S401ATMA1

IPB120N04S401ATMA1

MOSFET N-CH 40V 120A TO263-3-2


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IPB120N04S401ATMA1
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 308
  • Description: MOSFET N-CH 40V 120A TO263-3-2 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package D2PAK (TO-263AB)
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series OptiMOS™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 188W Tc
Turn On Delay Time 34 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 140μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 14000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 176nC @ 10V
Rise Time 16ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 36 ns
Turn-Off Delay Time 41 ns
Continuous Drain Current (ID) 120A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 40V
Input Capacitance 14nF
Drain to Source Resistance 1.35mOhm
Rds On Max 1.5 mΩ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet